Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Weight  

3.949996g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

195A Tc

Drive Voltage (Max Rds On, Min Rds On)  

6V 10V

Number of Elements  

1

Power Dissipation (Max)  

294W Tc

Turn Off Delay Time  

115 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3.9V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®, StrongIRFET™

Published  

2006

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Configuration  

SINGLE WITH BUILT-IN DIODE

Number of Channels  

1

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

294W

Case Connection  

DRAIN

Turn On Delay Time  

24 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.6m Ω @ 100A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

10820pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

324nC @ 10V

Rise Time  

68ns

Drain to Source Voltage (Vdss)  

40V

Vgs (Max)  

±20V

Fall Time (Typ)  

68 ns

Continuous Drain Current (ID)  

195A

Gate to Source Voltage (Vgs)  

20V

Pulsed Drain Current-Max (IDM)  

780A

DS Breakdown Voltage-Min  

40V

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free